• 专利附录
  • 专利说明
  • 权利要求
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    • 专利摘要:
    An RF transmission device (100) comprising at least: - a substrate (102) having first and second faces (104, 106) opposite one another; a first electronic RF transmission circuit (108) disposed on and / or in the substrate; a first antenna (112a) disposed on the side of the first face of the substrate, spaced apart from the first face of the substrate and electrically connected to the first electronic RF transmission circuit; a first electromagnetic wave reflector coupled to the first antenna and comprising: a first high impedance surface (114a) comprising at least a plurality of first electrically conductive elements (118) forming a first periodic structure and disposed on the first face of the substrate; next to the first antenna; - A first electrically conductive ground plane (116a) disposed at least partially opposite the first antenna.
    公开号:FR3032556A1
    申请号:FR1551121
    申请日:2015-02-11
    公开日:2016-08-12
    发明作者:Yann Lamy；Laurent Dussopt；Bouayadi Ossama El；Amazir Moknache
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] TECHNICAL FIELD AND PRIOR ART The invention relates to a radiofrequency (RF) transmission device comprising at least one electronic RF transmission circuit coupled to at least one integrated electromagnetic wave reflector. allowing the realization of the device with a small thickness, a high gain and good efficiency. The invention applies in particular to the field of RF transmission for frequencies ranging from about 1 GHz to about 300 GHz, and preferably between about 30 GHz and 250 GHz. In the field of RF transmission devices, the integration and packaging of RF components, also called RFIC chips or electronic RF transmission circuit, and their antennas are becoming increasingly important in terms of size, electrical performance, heat dissipation and cost. In particular, the connections of RF electronic components to the antennas become particularly critical in terms of losses (interconnections and antennas usually account for about half of the overall performance of transmission devices), which is all the more true that the frequencies as well as their number increase, as is the case in many future applications intended to operate at frequencies between 30 GHz and 250 GHz. Thus, with the emergence of microwave and millimeter communications for nomadic devices (phones, tablets, laptops, connected objects, etc.), it is increasingly important to miniaturize and improve the performance of packaging including the chip, or component, transmitter (transceiver, or "tranceiver" in the English terminology) RF and antennas, and this with a low cost for consumer applications.
    [0002] 3032556 2 A first category of RFIC chip packaging and their antennas is based on multilayer technologies obtained by lamination of organic and metallic layers. In this type of device, as for example described in documents US 2009/0256752 A1 and "Low Cost Antenna-in-Package Solutions for 60-GHz Phased-Array Systems" by DG Kam et al., IEEE Electrical Performance of Electronic Packages and Systems Conference (EPEPS), Oct. 2010, pp. 93-96, cavities are provided to accommodate and interconnect the RFIC chip on the one hand and to make reflective cavities, or resonant, for antennas on the other hand.
    [0003] These devices, however, have several disadvantages: they are complex to achieve because they involve a large number of layers. They are especially adapted to be made using PCB (printed circuit) manufacturing techniques, but these techniques are limited in terms of the resolution of routing lines and vertical interconnections that can be achieved, which is very disadvantageous for high frequency transmissions (eg greater than 60 GHz). Moreover, the positioning accuracies obtainable are also mediocre (generally greater than 500 μm), they are bulky, especially in terms of thickness because the cavities of the antennas are superimposed on the cavity of the chip, they allow the use of only one frequency band for which the antennas are optimized, - the rear face of the chip is not or very little in contact with the packaging which is itself organic matter which is a bad driver thermal. This has the consequence that very little heat is dissipated from the RFIC chip 25 which heats more and more, especially when the frequencies increase. Another variant of RFIC chip packaging and antennas is based on a fan-out integration, also called eWLB (embedded die Wafer Level BGA). In this type of device, as for example described in documents US 2012/0104574 A1 and "A 77-GHz SiGe Single-Chip Four-Channel Transceiver Module with Integrated Antennas in Embedded Wafer-Level BGA Package" 3032556 3 by M. Wojnowski et al., IEEE Electronic Components and Technology Conference (ECTC), June 2012, pp. 1027-1032, the chip is coated, active face downwards, in a polymeric material (typically epoxy) on which are reconstructed an electrical routing circuit, the antennas and the pads for the solder balls. The reflective plane of the antennas is located on the transfer PCB, and the antennas radiate upwards. This type of device has the advantage of having a low cost of implementation and generates relatively little loss in high frequencies due to the plastic substrate and / or the coating material used. However, it requires a reflector located on the PCB transfer substrate, which limits the routing density that can be achieved on the PCB. In addition, this type of structure involves removing connection balls under the antennas, which greatly reduces the mechanical reliability of the structure. In addition, the performance of the antennas critically depends on the height of the balls after assembly which must be equal to 4/4 ( Tg being the transmission wavelength in the propagation medium), and allows the realization of antennas 15 centered on only one frequency. Finally, the RFIC chip is embedded in a material with very little heat conductor, which is highly detrimental to heat dissipation. A third type of RFIC chip packaging with integrated antennas is described in Y. Lamy et al., IEEE 3D Systems Integration Conference (3DIC), "A compact 3D silicon interposer package with integrated 20 antenna for 60GHz wireless applications". 2013, pp. 1-6. Such a device is based on a silicon substrate on which the antennas are manufactured and on which is carried the RFIC chip. Despite a possible advantage in terms of resolution of patterns that can be achieved, this solution also suffers from a certain number of drawbacks: a reflective plane is necessarily disposed on the PCB, which implies design constraints and losses of place for routing; the connection balls are absent at the level of the reflector, which reduces the reliability of the blasting and therefore the mechanical maintenance of the assembly; the height of the balls has a very important impact on the structure obtained after assembly, and thus also on the properties of the antennas; - a single height is possible at the antennas, which implies a single band of possible transmission frequency for the device; the heat dissipation of the RFIC chip is insufficient. In general, these various RF transmission devices 5 suffer from a large amount of space due to the cavities or the distance to be maintained between the reflector planes and the antennas. If the reflective planes are brought closer to gain compactness, the performance of the antennas then drastically fall (fall in radiation efficiency and therefore the gain realized). SUMMARY OF THE INVENTION An object of the present invention is to propose an RF transmission device that does not have the disadvantages of the devices of the prior art, that is to say whose structure can be achieved by conventional methods. microelectronics with a low cost, which is compact while being powerful and compatible with a transmission in different frequency bands, which has good mechanical support and which dissipates the heat produced within it. For this, the present invention proposes an RF transmission device comprising at least: a substrate comprising first and second faces opposite to each other; A first RF transmission electronic circuit disposed on and / or in the substrate; a first antenna disposed on the side of the first face of the substrate, spaced apart from the first face of the substrate and electrically connected to the first electronic RF transmission circuit; A first electromagnetic wave reflector coupled to the first antenna and comprising at least: a first high impedance surface comprising at least a plurality of first electrically conductive elements forming a first periodic structure and disposed on the first face of the substrate; look at the first antenna; a first electrically conductive ground plane disposed at least partially opposite the first antenna.
    [0004] Such a device forms a miniaturized package of one or more electronic RF transmission circuits, or RF transmitters, comprising one or more integrated antennas that can have a small thickness, a high gain and a high efficiency thanks to the coupling of the antenna or antennas with one or more electromagnetic wave reflectors comprising one or more high impedance surfaces coupled to one or more electrically conductive ground planes. This integration of the electronic transmission circuit (s) RF offers multiple advantages, especially in the frequency range from about 1 GHz to about 300 GHz. Firstly, such a device makes it possible, by means of the electromagnetic wave reflector comprising a high impedance surface, to suppress the reflective cavity coupled to the antenna and which is necessary in the devices of the prior art, or of modify it by reducing it very strongly, for example by a factor of between approximately 10 and 100, while maintaining or even improving the transmission properties of the antenna. The combination of the high impedance surface and the ground plane forms an electromagnetic wave reflector which advantageously replaces a conventional metallic reflector plane coupled to a reflective cavity of height, or thickness, equal to V4 (which corresponds to a height, or thickness, of 1.25 mm for a transmission frequency in air equal to 60 GHz), while decreasing the thickness, or the height, necessary for its realization (which may be less than or equal to V10, either a thickness, or height, less than or equal to 500 μm), which makes the device integrable into electronic cards suitable for mobile phones or touch pads. In addition, the surface with high impedance screens, or masks, largely the substrate which can therefore be made from materials of lower quality in terms of dielectric losses, such as for example standard silicon, without affecting the performance of the device.
    [0005] This device also makes it possible to eliminate the dependence of the respective thicknesses of the RF transmission electronic circuit and / or the substrate with respect to the resonance wavelength of the antenna, because the design of the high impedance surface (choice of materials used, dimensions and shapes of the electrically conductive elements, etc.) makes it possible to optimize the performance of the antennas without imposing strict thickness conditions on the RF transmission electronic circuit or the substrate. Since no reflective cavity is present at the second face, or rear face, of the substrate, this face is entirely available for carrying thereon the multilayer electrical routing but also means for mechanical support of the substrate. , for example solder balls, thus increasing the reliability of the assembly made. This free face of the substrate also makes it possible to freely dispose of the interconnections of the package at this level. Since the electronic RF transmission circuit is disposed on or in the substrate, this structure makes it possible to optimize the heat dissipation of the RF transmission electronic circuit, in particular via its rear face, which may be in contact with the substrate over its entire surface. This configuration makes it possible to carry out a transfer of the electronic circuit in direct contact with the substrate, which is preferably a good thermal conductor, for example made of silicon (whose thermal dissipation coefficient is 150 W / (K.m)). This device also makes it possible to co-integrate in the same package, with the same technology and the same thickness of the substrate, several high-performance antennas operating at different frequencies or different frequency bands, because the optimization of the transmission of An antenna can be made by design of the high impedance surface for each frequency and not by the proper thicknesses of the substrate or a reflective cavity coupled thereto. This device can also be achieved via the implementation of conventional steps of microelectronics (deposition, photolithography, etc.), without having to implement many complex steps of rolling layers.
    [0006] A transmission device, or transceiver, is a device that can emit and / or receive waves. The substrate may correspond to a monolithic support (monolayer) or a substrate formed of several layers and / or assembled supports.
    [0007] A high impedance structure may correspond to a metallo-dielectric structure, generally composed of elementary cells arranged periodically and whose period is negligible in front of the wavelength at the frequency of interest. It is characterized by its resonance frequency fo at which a plane wave at normal incidence is totally reflected with a zero phase (amplitude reflection coefficient 1 and a phase 0). At this frequency, the output impedance presents, theoretically, an infinite real part (resistance) and an imaginary part (reactance) zero. In practice, we speak of high impedance behavior when the phase of the reflection coefficient is between about [-45 °; 45 °]. Advantageously, the first electronic RF transmission circuit 15 may be disposed at or on the first face of the substrate. The first electronic RF transmission circuit may, however, be arranged on or at one or the other of the first and second faces of the substrate. The first electrically conductive ground plane may be disposed on, or at, the second face of the substrate. Alternatively, the first electrically conductive ground plane could be disposed on another support than the second face of the substrate. The device may further comprise a first dielectric layer disposed on the first face of the substrate, surrounding the first RF transmission electronic circuit and on which the first antenna is disposed. Part of this first dielectric layer may also cover the first RF transmission electronics. As a variant of this first dielectric layer, the device may further comprise a cavity delimited by the first high-impedance surface and by a suspended membrane on which at least the first antenna is disposed.
    [0008] A distance between the first antenna and the first electrically conductive ground plane may be less than or equal to about one tenth of a central wavelength of first RF signals to be transmitted and / or received by the first antenna. The central wavelength of first RF signals intended to be transmitted and / or received by the first antenna corresponds to a central frequency lying in a frequency band for which the gain and adaptation of the antenna are optimal. This center frequency can correspond to that for which the gain is maximum. Such a configuration confers a very great compactness to the device. Each first electrically conductive element of the first high impedance surface may comprise one or more conductive, for example metallic, flat portions arranged next to one another and / or in different planes superimposed on each other, the first surface at high impedance may further comprise a second dielectric layer in which are arranged the first electrically conductive elements.
    [0009] In this case, each first electrically conductive element of the first high impedance surface may further comprise at least one conductive, for example metallic, vertical portion connected to the or at least one of the flat conductive portions of said first electrically conductive element. The device may further comprise: - a plurality of first electrically conductive vias traversing at least the substrate and electrically connected to the first electronic RF transmission circuit, and / or - a plurality of second electrically conductive vias traversing at least the substrate and arranged around the first antenna forming a guard ring around the first antenna, and / or - a plurality of thermally conductive third vias traversing at least the substrate and disposed under the first RF transmission circuit. The first electrically conductive vias in this case serve as input and / or output electrical connections connected to the first electronic RF transmission circuit. These first vias can be electrically connected to a printed circuit board to which the substrate is secured. The second electrically conductive vias form a guard ring around the first antenna, which makes it possible to electromagnetically isolate the first antenna from other elements, for example other antennas, and reduce thus strongly the cross talk between them. The third thermally conductive vias which are arranged under the first RF transmission circuit participate actively in the dissipation of the heat generated by this circuit thanks to the high thermal conductivity of these third vias.
    [0010] This is particularly the case when the material of the third vias is metallic, for example copper, which is an excellent thermal and electrical conductor. The third thermally conductive vias may be electrically conductive. Thus, these third vias can make it possible to carry out electrical routing.
    [0011] The device may further comprise at least: a second antenna disposed on the side of the first face of the substrate, spaced from the first face of the substrate and electrically connected to the first electronic RF transmission circuit; a second electromagnetic wave reflector coupled to the second antenna and comprising at least: a second high impedance surface comprising at least a plurality of second electrically conductive elements forming a second periodic structure and arranged on the first face of the substrate opposite the second antenna; A second electrically conductive ground plane disposed at least partially opposite the second antenna. The device may thus comprise a plurality of antennas capable of transmitting RF signals at frequencies or bands of different frequencies. Such a configuration is for example advantageous in the case of the deployment of the future 5G systems which will use several types of millimeter frequencies: 3032556 10 for example 60 GHz for the cellular network and 80 GHz for "backhauling" or link point to point. Alternatively, the device may further comprise at least: a second electronic RF transmission circuit disposed on and / or in the substrate; a second antenna disposed on the side of the first face of the substrate, spaced apart from the first face of the substrate and electrically connected to the second electronic RF transmission circuit; a second electromagnetic wave reflector coupled to the second antenna and comprising at least: a second high impedance surface comprising at least a plurality of second electrically conductive elements forming a second periodic structure and disposed on the first face of the substrate opposite the second antenna; A second electrically conductive ground plane disposed at least partially opposite the second antenna. There too, the device can realize transmissions of signals at different frequencies as explained above. The second electronic RF transmission circuit is advantageously disposed at or on the first face of the substrate, but it can be arranged independently on or at one or other of the first and second faces of the substrate. The second electrically conductive ground plane may be disposed on, or at, the second face of the substrate. Alternatively, the second electrically conductive ground plane 25 could be disposed on another support than the second face of the substrate. The first and second electrically conductive elements of the first and second high impedance surfaces may be arranged in the same second dielectric layer on which at least the first electronic RF transmission circuit is disposed.
    [0012] The device may further comprise a printed circuit to which the substrate is secured and to which at least the first RF transmission electronic circuit is electrically connected. Advantageously, the substrate may be mechanically and electrically connected to the printed circuit by means of a plurality of conductive balls, for example metallic, regularly distributed over the second face of the substrate. The invention also relates to a method for producing an RF transmission device, comprising at least the steps of: - producing, on a first face of a substrate, a first high impedance surface comprising at least several first electrically conductive elements forming a first periodic structure; - Transfer of a first electronic RF transmission circuit on and / or in the substrate; - Realizing a first antenna disposed on the side of the first face of the substrate and facing the first electrically conductive elements, spaced from the first face of the substrate and electrically connected to the first electronic RF transmission circuit; - Making a first electrically conductive ground plane 20 at least partially facing the first antenna; and wherein the first high impedance surface and the first electrically conductive ground plane together form a first electromagnetic wave reflector coupled to the first antenna. The method may further comprise the steps of: - producing at least a second antenna disposed on the side of the first face of the substrate, spaced from the first face of the substrate and electrically connected to the first electronic RF transmission circuit or a second electronic RF transmission circuit reported on and / or in the substrate; - Realization of at least a second electromagnetic wave reflector coupled to the second antenna and comprising at least: a second high impedance surface having at least a plurality of second electrically conductive elements forming a second periodic structure and arranged on the first face of the substrate facing the second antenna; A second electrically conductive ground plane disposed at least partially facing the second antenna. The invention can advantageously be applied to different applications such as: short-range wireless communications (typically performed at 60 GHz), for example very high speed WiGig, WiHD, HDMI wireless communications, etc. ; - sensor networks; - automotive radars (operating in particular at frequencies of 24 GHz, 77 GHz, etc.); Imaging and security (transmission of mmW and THz signals); millimetric avionics radars (transmission at 90 GHz); 4G or 5G high-speed wireless communications (or LTE for "Long Term Evolution" in English terminology) and localized cells ("small cells" in English terminology) or point-to-point links 20 ("backhauling" in English terminology). BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be better understood on reading the description of exemplary embodiments given purely by way of indication and in no way limiting, with reference to the appended drawings in which: FIGS. 1 and 4 show a transmission device RF, object of the present invention, according to a first embodiment; - Figures 2 and 3 show an embodiment of electrically conductive elements of a high impedance surface of an RF transmission device object of the present invention; FIGS. 5 and 6 show a portion of an RF transmission device, object of the present invention, according to a second embodiment; FIG. 7 represents a part of an RF transmission device, object of the present invention, according to a variant of the first embodiment.
    [0013] Identical, similar or equivalent parts of the various figures described below bear the same numerical references so as to facilitate the passage from one figure to another. The different parts shown in the figures are not necessarily in a uniform scale, to make the figures more readable.
    [0014] The different possibilities (variants and embodiments) must be understood as not being exclusive of one another and can be combined with one another. DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS Referring first to FIG. 1, there is shown an RF transmission device 100 according to a first embodiment. The device 100 is intended to transmit and / or receive RF signals of frequency for example between about 1 GHz and 300 GHz, here equal to 60 GHz. The device 100 comprises a substrate 102. The material of the substrate 102 is advantageously chosen from materials which are poorly conducting (having a high resistivity, for example greater than about 1 kOhm.cm), good thermal conductors (including thermal conduction is preferably greater than about 10 W / Km), very little dissipative in the wavelength range of the RF signals intended to be emitted and / or received by the device 100, and which allows implementation of production methods micro-connectors of very good resolution (for example less than about 1 μm in size) for the realization of routing lines, high impedance surfaces and antennas collectively. In addition, this substrate 102 is preferably the cheapest possible. One of the materials fulfilling these criteria is, for example, silicon. The thickness of the substrate 102 is advantageously chosen such that the substrate 102 is as thin as possible while being rigid enough to be manipulated. This thickness is for example between about 50 μm and 500 μm, advantageously between about 200 μm and 300 μm (which is thinner than the structures of the prior art whose thicknesses are typically between about 500 μm and 2 mm. ).
    [0015] The substrate 102 has a first face 104, here forming a front face of the substrate 102, and a second face 106 opposite to the first face 104 and here forming a rear face of the substrate 102. The device 100 also comprises an electronic circuit, for example in the form of a chip, or integrated circuit, RF transmission 108, disposed on the first face 104 of the substrate 102. The rear face of the circuit 108 is disposed on the side of the substrate 102, and the active face of the circuit 108 is that at which the input and output pads of the circuit 108 are located, is on the opposite side to the substrate 102. The circuit 108 has for example a thickness (dimension along the Z axis) between about 10 μm and 300 μm, preferably between about 50 μm and 100 μm. Such a thickness can be obtained through the implementation of a thinning of the circuit 108. The circuit 108 can be maintained at the substrate 102 by means of a glue or thermally conductive grease. The circuit 108 is surrounded by a dielectric layer 110 formed on the first face 104 of the substrate 102 and whose thickness is for example equal to or close to that of the circuit 108. It is possible that the thickness of the dielectric layer 110 is slightly greater (for example from 10 μm to 50 μm more) than that of the circuit 108, the dielectric layer 110 coating, or covering, in this case the circuit 108. The thickness of the dielectric layer 110 is typically between about 10 μm and 300 μm. The dielectric layer 110 comprises, for example, oxide, such as SiO 2, nitride, such as SiN, or preferentially a photosensitive polymer, such as SiNR, BCB, Intervia, etc.). The material of the dielectric layer 110 is advantageously chosen from those which are very good insulators and which are weakly dissipative in the operating frequency range of the device 100. In addition, the permittivity and the permeability of the material of the dielectric layer 110 are preferably known to enhance the performance of the antenna (s) 110 through the judicious choice of the high impedance surface parameters described below. Finally, the upper face of the dielectric layer 110 is advantageously flat thanks to the use of a so-called "planarizing" material, such as for example certain polymers, which make it possible to have a flat surface despite the thickness of the circuit 108 covered, or else through a planarization (for example a CMP) implemented after the deposition of this dielectric material. The circuit 108 is electrically connected to one or more antennas 112 disposed on the dielectric layer 110. In the example of FIG. 1, the device comprises two antennas 112a, 112b, one for transmitting RF signals and the other for 10 receive RF signals. The antennas 112a, 112b are for example formed by metal lines extending on the dielectric layer 110, next to the circuit 108. The antennas 112a, 112b are for example of the dipole type. The antennas 112a, 112b may be electrically connected to the circuit 108, in particular by interconnection lines 130 extending over the dielectric layer 110 and by conductive vias traversing the dielectric material of the layer 110 covering the circuit 108. The conductive portions forming the antennas 112a, 112b and the electrical interconnection lines 130 connecting the antennas 112a, 112b to the circuit 108 may have a thickness of between about 0.5 μm and 10 μm. The device 100 also comprises one or more electromagnetic wave reflectors 20, each associated with an antenna 112. Each electromagnetic wave reflector is formed of: a high-impedance surface 114 disposed on the first face 104 of the substrate 102, opposite the antenna 112 to which the reflector of electromagnetic waves is associated, and between the substrate 102 and the dielectric layer 110, and 25 - an electrically conductive ground plane 116 disposed on the second face 106 of the substrate 102 and aligned (along the axis Z in FIG. 1) with respect to the antenna 112 to which the electromagnetic wave reflector is associated (and thus also aligned with the high impedance surface 114 of the wave reflector electromagnetic).
    [0016] In the example of FIG. 1, the antenna 112a is coupled to an electromagnetic wave reflector formed by the high impedance surface 114a and the ground plane 116a, and the antenna 112b is coupled to another reflector. electromagnetic wave formed by the high impedance surface 114b and the ground plane 116b. In the example of FIG. 1, each of the ground planes 116 corresponds to a metal portion, comprising, for example, a titanium / copper bilayer, located opposite the corresponding antenna 112. Alternatively, the ground planes 116 of the electromagnetic wave reflectors may be formed by a non-etched metal layer or stack of layers covering the second face 106 of the substrate 102. Each high impedance surface 114 has a plurality of electrically conductors 118, for example metallic, repeated in a periodic structure reflecting the electric field of the electromagnetic waves reaching the high impedance surface 114 and creating the necessary phase conditions for the magnetic field of the waves to be reflected by the combination of the surface high impedance 114 and 116 associated ground plane. The electrically conductive elements 118 may be made with metals generally used in microelectronics, such as for example copper, aluminum, titanium, etc. The conductive elements 118 of a high impedance surface 114 form repeated geometrical patterns arranged side by side with a certain period. Each geometric pattern is formed by at least a portion of electrically conductive material, for example square, hexagonal, etc. Each geometric pattern may also be formed of several portions of plane electrically conductive material arranged next to each other in the same plane and / or arranged in several planes superimposed one above the other. Each geometric pattern may also include at least one vertical conductive portion connected to the or one of the other conductive portions of the geometric pattern. The electrically conductive elements 118 of a high impedance surface 114 are advantageously arranged within a dielectric layer 120 based on a very weakly conductive material and very weakly dissipative in the operating frequency band of the device 100. for example an oxide such as SiO 2 or a nitride. The dielectric layer 120 may also comprise a permeability material u '(magnetic property) for example with a value of between approximately 1 and 50, for example insulating ferrite, making it possible to concentrate the magnetic field lines and to reinforce the effect. electromagnetic surfaces with high impedance. The layer 120 may correspond to a stack of several dielectric layers. High impedance surfaces 114 exhibit special electromagnetic behavior in a certain frequency band. The periodic structures of the surfaces 114 may have a spatial periodicity and are considered homogeneous with respect to the wavelength at the transmission frequency for which they are designed. Each high impedance surface 114 associated with a ground plane 116 thus behaves like a reflective cavity, or resonant, V4 coupled to a "conventional" reflective plane (simple metal plane) for the antenna, from an electromagnetic point of view but significantly improves its performance (especially gain and directivity) with much lower thicknesses (V10 to V20) in front of the wavelength. In the example of FIG. 1, the high impedance surfaces 114a, 114b comprise a dielectric layer 120 which is common to the high impedance surfaces 114a, 114b and in which the conductive elements 118 of the high impedance surfaces 114a are disposed, 114b. The high impedance surface (s) 114 of the device 100 preferably have a very small thickness, for example between about 500 nm and 5 μm, relative to that of the substrate 102, which is for example between about 50 μm and 500 μm. The thickness of each periodic pattern formed by the electrically conductive elements 118 is for example between about 50 nm and 1 μm, for example equal to about 500 nm. The thickness of the dielectric layer 120 is for example between about 100 nm and 5 μm. The parameters of the elements forming the high impedance surfaces 114 (height of the electrically conductive elements 118, thickness of the dielectric layer 120, number and shape of the patterns of the periodic structure, etc.) are chosen precisely by taking into account account the overall architecture of the device 100, and in particular by considering the thickness of the substrate 102, the distance between the antennas 112 and the associated high impedance surfaces 114, the materials used, the properties of the antennas 112, the operating frequencies of the device 100, etc. This is achieved through the use of electromagnetic simulation software such as HFSS software distributed by Ansys, or Momentum software distributed by Keysight. The dimensions of the patterns and the spaces separating them must be very well defined in the final module because at high frequencies, for example above 60 GHz, the characteristic dimensions of the patterns and the spaces between them may be less than a few microns. Figure 2 shows a side view of two electrically conductive elements 118 of a high impedance surface 114 to be coupled to an antenna 112 providing a wave transmission. FIG. 3 shows a three-dimensional view of one of these electrically conductive elements 118. Each element 118 comprises a first flat, square-section conductive portion 122, each side of which is, for example, approximately 175 μm, to which is incidentally connected to a second vertical conductive portion 124 of cylindrical shape, for example of diameter equal to about 60 microns and height equal to about 3 microns. Each element 118 also has four third conductive portions 126 planar and of square section, of smaller dimensions than those of the first conductive portion 122. Each of the third conductive portions 126 advantageously has lateral dimensions approximately four times smaller than those of the first portion 122, for example a side equal to about 45 μm, and each disposed opposite one of the corners of the first conductive portion 122. Each of the third conductive portions 126 is offset from one of the corners of the first conductive portion 122 by a distance "a" for example equal to 10 .mu.m. The third conductive portions 126 are disposed above the first conductive portion 122 and are separated from the first conductive portion 122 by dielectric material of the diaper 120. When the first portion 122 has a thickness equal to about 30 microns. the height between the first portion 122 and the third portions 126 is for example equal to about 6 μm. The conductive portions of the elements 118 here comprise copper, and the dielectric layer 120 corresponds to a layer of SiO 2.
    [0017] Examples of dimensions and materials are given below for a device 100 transmitting signals of frequency equal to about 60 GHz: substrate 102 comprising silicon with high resistivity (resistivity greater than 1 kOhm.cm, permittivity equal to 11.9 ) and a thickness of about 200 μm; High impedance surfaces 114 having elements 118 formed from a copper metal layer having a thickness of about 500 nm, with square units having a side of about 200 μm, arranged side by side in a same horizontal plane and spaced from each other by a distance of about 20 μm; Dielectric layer 110 comprising a passivation polymer of the ALX or BCB type and having a thickness equal to approximately 12 μm; antennas 112 and electrical interconnections 130 made from a layer of copper or gold of thickness equal to about 1 μm, the antennas 112 being of the folded dipole type, 20 - ground planes 116 formed of a Ti / bilayer copper of thickness equal to about 500 nm. Under the conditions set out above, the simulation and the technological realization of a transmission device are in agreement and demonstrate properties of the antennas that are as good (gain of at least +5 dBi, bandwidth of approximately 10 - 15% ) or better than a transmission device which comprises, in place of an electromagnetic wave reflector as described above, a conventional antenna coupled to a reflector formed of a single metal layer spaced from the antenna of a distance equal to V4, 1.25 mm, which is much more bulky than the thickness of the device 100 previously described.
    [0018] In order to improve the compactness and the heat dissipation of the circuit 108, it is possible to make conducting through vias, for example metallic vias, in the substrate 102. These vias can have several functions: electrical connections at the periphery of the device 100, at the rear face of the substrate 102, and thus make it possible to perform a billing of electrical connections after routing on the rear face of the substrate 102; they allow a guard ring to be formed around each antenna 112, thus isolating the antennas 112 from one another by greatly reducing the cross talk between them; Vias placed directly under the circuit 108 actively participate in the dissipation of the heat generated in the circuit 108 thanks to the high thermal conductivity of the metal (for example, the thermal conductivity of the copper is about 400 W / Km whereas that of silicon is about 150 W / Km and that of an organic substrate is less than about 1 W / Km). These heat dissipation vias disposed under the circuit 108 are not necessarily electrically connected to the circuit 108. These different through vias may or may not be isolated from the substrate 102, for example by forming a thin dielectric layer between the conductive material of the via and the semiconductor substrate 102, to avoid losses or interference. Figure 4 is a schematic top view of the device 100 on which the different types of conductive vias made in the substrate 102 are shown. First conductive vias 128 are formed at the periphery of the substrate 102 and are electrically connected to the circuit 108 by the electrical interconnections 130 (for example formed from the same metal layer used for the realization of the antennas 112). These first vias 128 open at the rear face of the substrate 102, through the substrate 102 and the dielectric layers 120 and 110 to lead to the top of the dielectric layer 110, next to the circuit 108. Second conductive vias 132 are made of periphery of the substrate 102, around the antennas 112 thus forming guard rings. In the example described here, these second conductive vias 132 are not electrically connected to the circuit 108. The second conductive vias 132 open at the rear face of the substrate 102, pass through the substrate 102 and the dielectric layers 120 and 110 to lead to the top of the dielectric layer 110. Third conductive vias 134 pass through only the substrate 102 and the dielectric layer 120 and are arranged under the circuit 108 and allow to dissipate the heat produced by the circuit 108. The rear face 106 of the substrate 102 is at least partially covered by an electrically conductive layer or electrically conductive portions which form in particular the ground planes 116, but also conductive supports for assembling the substrate 102 on a printed circuit 136 (PCB) via 138 beads, or microbeads, made from a solder material. Since the ground planes 116 are arranged directly against the rear face 106 of the substrate 102, it is possible to completely cover the rear face of the substrate 102 by balls 138. Given the large dimensions of the device 100 in the case of multiple 15 antennas (about 15x15 mm2 or more), this homogeneous distribution of the balls 138 at the level of the whole of the rear face 106 of the substrate 102 ensures a very good connection reliability between the substrate and the printed circuit 136. In addition, some balls 138 provide electrical connections between the circuit 108 (via the first vias 128) and the printed circuit 136. Alternatively, it is possible that the third vias 134 20 are electrically connected to the circuit 108 at its face rear, and thus provide one or more electrical connections between the circuit 108 and the printed circuit 136. Mechanical and electrical connection means other than the balls 138 can be used. As a variant of this assembly made by the balls 138, the substrate 102 can be glued directly to the printed circuit 136, and the electrical connections between the circuit 108 and the printed circuit 136 are then made by electrical wires ("wire bonding" ) connected to the front face of the circuit 108 and to the printed circuit 136. The device 100 can be realized via the implementation of conventional micro-fabrication techniques of microelectronics, with a relatively moderate number of steps, and therefore with a low cost. An example of a method of producing the device 100 is described below. The process is carried out from the substrate 102. The electrically conductive elements 118 of the high impedance surfaces 114 are made by metal deposition, photolithography and etching. The dielectric layer 120 is formed by successive deposits of dielectric material used during the production of the various conductive portions of the elements 118. The circuit 108 is then transferred to the dielectric layer 120. A thinning of the circuit 108 can be implemented. work prior to the report that can be made by a transfer machine by "flip chip" (for example of the type "datacon 2200+" marketed by Besi). The circuit 108 can be maintained at the substrate 108 by means of a thermally conductive adhesive or grease. A dielectric material is then deposited by spin coating ("spin coating"), spraying ("spray coating") or lamination, depending on the nature of the material, in particular around the circuit 108 and on the dielectric layer 120, thus forming the dielectric layer 110. The upper face of the dielectric layer 110 is here plane thanks to the use of a so-called "planarizing" dielectric material, or via the implementation of a planarization of the deposited dielectric material.
    [0019] As a result of the deposition of the dielectric material, electrical contacts may be resumed through the dielectric material of the layer 110 covering the circuit 108, at the contact pads of the circuit 108. These contact resumptions may be carried out either by photolithography if the material of the dielectric layer 110 is photosensitive, either by conventional lithography and etching, or by laser etching. The conductive interconnection lines 130 and the antennas 112 are then formed on this dielectric layer 110, connected to contact pads of the circuit 108. The substrate 102 may optionally be thinned from its rear face 106 to its final thickness (for example example between about 50 μm and 500 μm). A metal layer is then deposited on the rear face 106 of the substrate 102 to form the ground planes 116, this layer being able to be structured or not. Conductive vias 128, 132 and 134 are then produced using conventional techniques: photolithography, deep etching or laser drilling, and filling with conductive materials (copper, aluminum, etc.). Alternatively, it is possible that these vias are made before the high impedance surface 118 from the front face of the substrate 102. These vias are then revealed at the rear face of the substrate 102 after a thinning of the substrate 102.
    [0020] The assembly is then secured and electrically connected to the printed circuit 136. The device 100 previously described comprises a single circuit 108 ensuring the transmission and reception of signals at the same frequency (for example 60 GHz) via two antennas 112a, 112b each coupled to an electromagnetic wave reflector having a high impedance surface 114a, 114b and a ground plane 116a, 116b. In a second embodiment, it is possible for the device 100 to transmit and receive signals at different frequencies from one another. An exemplary device 100 according to this second embodiment is shown in FIGS. 5 and 6. In these figures, the various conductive vias crossing the substrate 102 and corresponding to the vias 128, 132 and 134 previously described are not shown. The device 100 according to this second embodiment integrates several antennas 112 (two antennas 112a, 112b in the example described here) intended to transmit / receive signals of different frequencies with respect to each other. In the example described here, the first antenna 112a is capable of transmitting and receiving signals of frequency equal to 60 GHz, and the second antenna 112b is capable of transmitting and receiving signals of frequency equal to 80. GHz. In addition, each of these antennas 112a, 112b is connected to a circuit 108a, 108b which is associated with it. As a variant, the device 100 could comprise only one circuit 108 capable of managing the transmissions at different frequencies. In this second embodiment, the substrate 102 and the dielectric layer 110 may have the same thickness as the device 100 according to the first embodiment. The circuits 108a, 108b here have substantially equal thicknesses (to within 10%) and are reported identically (flip-chip back on the substrate 102). Since the transmission frequencies for the two antennas 112a, 112b are different, the high impedance surfaces 114a, 114b coupled to these antennas 112a, 112b are formed by electrically conductive elements 118a, 118b different from a surface to the other and forming different periodic structures for these two high impedance surfaces 114a, 114b. Advantageously, the optimization of the respective electromagnetic performances of each antenna 112a, 112b is carried out solely by an optimization of the designs of the patterns of the electrically conductive elements 118a, 118b in the same dielectric material, for example an ALX type polymer forming the layer 120. By optimizing their shape, size, number and distribution, it is possible to achieve two high impedance surfaces giving the two antennas good performance at different frequencies on a substrate 102 of the same thickness.
    [0021] If necessary, the dielectric of the layers 110 and / or 120 may be different in the two antennas 112a, 112b for the purpose of independently and significantly improving the electromagnetic properties of each of the high impedance surfaces 114a, 114b. However, this has the consequence of complicating the method of producing the device 100 since the two high impedance surfaces 114a, 114b must be made in two stages. Finally, the ground planes 116 associated with each antenna 112a, 112b are formed by the same unstructured metal layer 116 of substantially constant thickness deposited on the whole of the rear face 106 of the substrate 102. mass 116a, 116b formed by separate portions could be made.
    [0022] The device 100 according to this second embodiment may comprise more than two circuits 108 and / or antennas 112 of different frequencies. As a variant of the two embodiments previously described, it is possible for the dielectric layer 110 and the dielectric layer 120 to be etched in order to eliminate the parts of these layers that are not facing the antennas 112. This makes it possible in particular to limit the induced stresses on the substrate 102 and power to resume electrical contact by passing conductive lines on the sides of these dielectric layers. This is easily achievable if the dielectric is a photosensitive polymer, or else by conventional photolithography and etching techniques. Figure 7 shows the device 100 according to a variant of the first embodiment. In this variant, the dielectric layer 110 is replaced by a cavity 140 formed between the high impedance surfaces 114a, 114b and a suspended membrane 142 on which the antennas 112a, 112b and the electrical interconnection lines 130 are formed. suspended is formed by a dielectric layer of thickness for example between about 1 um and 5 um. The cavity 140 has side walls formed by first portions of this dielectric layer, and an upper wall formed by a second portion of the dielectric layer at which the antennas 112a, 112b and the electrical interconnection lines 130 are located. The height, or the thickness, of the cavity 140 is for example equal to the thickness of the dielectric layer 110. The cavity 140 is filled with air. This variant in which the dielectric layer 110 is replaced by the cavity 140 can also be applied to the second embodiment. 25
    权利要求:
    Claims (18)
    [0001]
    REVENDICATIONS1. An RF transmission device (100) comprising at least: a substrate (102) having first and second faces (104, 106) opposite one another; a first RF transmission electronic circuit (108, 108a) disposed on and / or in the substrate (102); a first antenna (112a) disposed on the side of the first face (104) of the substrate (102), spaced from the first face (104) of the substrate (102) and electrically connected to the first electronic RF transmission circuit (108, 108a); ); a first electromagnetic wave reflector coupled to the first antenna (112a) and comprising at least: a first high impedance surface (114a) having at least a plurality of first electrically conductive elements (118, 118a) forming a first periodic structure and disposed on the first face (104) of the substrate (102) facing the first antenna (112a); - A first electrically conductive ground plane (116, 116a) disposed at least partially opposite the first antenna (112a).
    [0002]
    The device (100) of claim 1, wherein the first RF transmission electronic circuit (108a, 108a) is disposed at the first face (104) of the substrate (102).
    [0003]
    3. Device (100) according to one of the preceding claims, wherein the first electrically conductive ground plane (116, 116a) is disposed on the second face (106) of the substrate (102).
    [0004]
    4. Device (100) according to one of the preceding claims, further comprising a first dielectric layer (110) disposed on the first face (104) of the substrate (102), surrounding the first electronic RF transmission circuit (108). , 108a) and on which the first antenna (112a) is disposed.
    [0005]
    5. Device (100) according to one of claims 1 to 3, further comprising a cavity defined by the first high impedance surface (114a) and a suspended membrane on which at least the first antenna (112a) is disposed .
    [0006]
    The device (100) according to one of the preceding claims, wherein a distance between the first antenna (112a) and the first electrically conductive ground plane (116, 116a) is less than or equal to about one-tenth of a central wavelength of first RF signals to be transmitted and / or received by the first antenna (112a).
    [0007]
    The apparatus (100) according to one of the preceding claims, wherein each first electrically conductive element (118, 118a) of the first high impedance surface (114a) has one or more planar conductive portions (122, 126) disposed therein. next to one another and / or in different planes superimposed on one another, the first high impedance surface (114a) further comprising a second dielectric layer (120) in which the first 20 electrically conductive elements (118, 118a).
    [0008]
    The apparatus (100) of claim 7, wherein each first electrically conductive element (118, 118a) of the first high impedance surface (114a) further comprises at least one vertical conductive portion (124) connected to the or at least one of the flat conductive portions (122) of said first electrically conductive member (118, 118a).
    [0009]
    9. Device (100) according to one of the preceding claims, further comprising: a plurality of first electrically conductive vias (128) passing through at least the substrate (102) and electrically connected to the first electronic RF transmission circuit (108, 108a), and / or - a plurality of second electrically conductive vias (132) passing through at least the substrate (102) and disposed around the first antenna (112a) forming a guard ring around the first antenna (112a), and / or - a plurality of thermally conductive third vias (134) passing through at least the substrate (102) and arranged under the first RF transmission circuit (108, 108a). 10
    [0010]
    The device (100) of claim 9, wherein the third thermally conductive vias (134) are electrically conductive.
    [0011]
    11. Device (100) according to one of the preceding claims, 15 further comprising at least: a second antenna (112b) disposed on the side of the first face (104) of the substrate (102) spaced from the first face (104) ) of the substrate (102) and electrically connected to the first RF transmission electronic circuit (108); a second electromagnetic wave reflector coupled to the second antenna (112b) and comprising at least: a second high impedance surface (114b) having at least a plurality of second electrically conductive elements (118, 118b) forming a second periodic structure and disposed on the first face (104) of the substrate (102) facing the second antenna (112b); A second electrically conductive ground plane (116, 116b) disposed at least partially facing the second antenna (112b).
    [0012]
    The device (100) according to one of claims 1 to 10, further comprising at least: a second RF transmission electronic circuit (108b) disposed on and / or in the substrate (102); a second antenna (112b) disposed on the side of the first face (104) of the substrate (102), spaced from the first face (104) of the substrate (102) and electrically connected to the second electronic RF transmission circuit (108b) ; a second electromagnetic wave reflector coupled to the second antenna (112b) and comprising at least: a second high impedance surface (114b) comprising at least a plurality of second electrically conductive elements (118b) forming a second periodic structure and arranged on the first face (104) of the substrate (102) facing the second antenna (112b); a second electrically conductive ground plane (116, 116b) arranged at least partially facing the second antenna (112b). 15
    [0013]
    13. Device (100) according to one of claims 11 or 12, wherein the second electrically conductive ground plane (116, 116b) is disposed on the second face (106) of the substrate (102).
    [0014]
    The device (100) according to one of claims 11 to 13, wherein the first and second electrically conductive members (118, 118a, 118b) of the first and second high impedance surfaces (114a, 114b) are disposed in a same second dielectric layer (120) on which at least the first RF transmission electronic circuit (108, 108a) is arranged. 25
    [0015]
    15. Device (100) according to one of the preceding claims, further comprising a printed circuit (136) to which the substrate (102) is secured and to which at least the first electronic RF transmission circuit (108, 108a) is electrically connected. . 3032556
    [0016]
    16. Device (100) according to claim 15, wherein the substrate (102) is mechanically and electrically connected to the printed circuit (136) via a plurality of conductive balls (138) evenly distributed on the second face ( 106) of the substrate (102). 5
    [0017]
    17. A method of producing an RF transmission device (100), comprising at least the steps of: - producing, on a first face (104) of a substrate (102), a first high-impedance surface ( 114a) having at least a plurality of first electrically conductive elements (118, 118a) forming a first periodic structure; - Transferring a first RF transmission electronic circuit (108, 108a) to and / or in the substrate (102); - Realizing a first antenna (112a) disposed on the side of the first face (104) of the substrate (102) and facing the first electrically conductive elements (118, 118a), spaced from the first face (104) of the substrate (102) and electrically connected to the first RF transmission electronic circuit (108, 108a); - Realizing a first electrically conductive ground plane (116, 116a) at least partially facing the first antenna (112a); And wherein the first high impedance surface (114a) and the first electrically conductive ground plane (116, 116a) together form a first electromagnetic wave reflector coupled to the first antenna (114a).
    [0018]
    18. The method of claim 17, further comprising the steps of: - producing at least a second antenna (112b) disposed on the side of the first face (104) of the substrate (102), spaced from the first face ( 104) of the substrate (102) and electrically connected to the first RF transmission electronics (108) or a second RF transmission electronics (108b) carried on and / or in the substrate (102); - Realization of at least a second electromagnetic wave reflector coupled to the second antenna (112b) and comprising at least: a second high impedance surface (114b) having at least a plurality of second electrically conductive elements (118, 118b) forming a second periodic structure and disposed on the first face (104) of the substrate (102) facing the second antenna (112b); a second electrically conductive ground plane (116, 116b) arranged at least partially facing the second antenna (112b).
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    同族专利:
    公开号 | 公开日
    FR3032556B1|2017-03-17|
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    EP3057130A1|2016-08-17|
    US20160233178A1|2016-08-11|
    EP3057130B1|2020-12-16|
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    法律状态:
    2016-02-29| PLFP| Fee payment|Year of fee payment: 2 |
    2016-08-12| PLSC| Publication of the preliminary search report|Effective date: 20160812 |
    2017-02-28| PLFP| Fee payment|Year of fee payment: 3 |
    2018-02-26| PLFP| Fee payment|Year of fee payment: 4 |
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    2021-02-26| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1551121A|FR3032556B1|2015-02-11|2015-02-11|RF TRANSMISSION DEVICE WITH INTEGRATED ELECTROMAGNETIC WAVE REFLECTOR|FR1551121A| FR3032556B1|2015-02-11|2015-02-11|RF TRANSMISSION DEVICE WITH INTEGRATED ELECTROMAGNETIC WAVE REFLECTOR|
    US15/040,354| US9536845B2|2015-02-11|2016-02-10|Device for radiofrequencytransmission with an integrated electromagnetic wave reflector|
    EP16154981.1A| EP3057130B1|2015-02-11|2016-02-10|Rf transmission device with built-in electromagnetic wave reflector|
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